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2SJ186
Silicon P Channel MOS FET
REJ03G0849-0200 (Previous: ADE-208-1184) Rev.2.00 Sep 07, 2005
Description
High speed power switching
Features
* * * * Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
D
3
2
1
G
4
1. Gate 2. Drain 3. Source 4. Drain
S
Note: Marking is "CY". *UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ186
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value -200 15 -0.5 -1.0 -0.5 1 150 -55 to +150
Unit V V A A A W C C
Pch Tch
Note 2
Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min -200 15 -- -- -2.0 -- -- 0.18 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 8.0 10.0 0.3 75 32 5 6 6 17 15 0.95 100 Max -- -- 10 -50 -4.0 12.0 15.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 12 V, VDS = 0 VDS = -160 V, VGS = 0 ID = -1 mA, VDS = -10 V ID = -0.25 A, VGS = -10 V Note 3 ID = -1 A, VGS = -10 V ID = -0.25 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz ID = -0.25 A VGS = -10 V RL = 120 IF = -0.5 A, VGS = 0 IF = -0.5 A, VGS = 0 diF/dt = 50 A/s
Note 3
Note 3
Rev.2.00 Sep 07, 2005 page 2 of 6
2SJ186
Main Characteristics
Power vs. Temperature Derating
1.2 -10
Maximum Safe Operation Area
Pch (W)
ID (A)
-1
10
10 0 PW 1 s m =1 DC 0m s Op s( era 1s tio ho n( t) Tc =2 Operation in 5 this area is C) limited by RDS (on)
Ta = 25C -3 -10 -30
0.8
s
Channel Dissipation
Drain Current
0 50 100 150
-0.1
0.4
-0.01
0
-0.001 -1
-100 -300 -1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
-1.0 -10 V -8 V Pulse Test -1.0
Typical Transfer Characteristics
-25C
25C Tc = 75C
ID (A)
-0.8
ID (A) Drain Current
-6 V
-0.8
-0.6
-0.6 -5 V
Drain Current
-0.4
-0.4
-0.2 VGS = -4 V 0 0 -10 -20 -30 -40 -50
-0.2 VDS = -20 V Pulse Test 0 0 -2 -4 -6 -8 -10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
-20 Pulse Test -16
Static Drain to Source on State Resistance RDS (on) ()
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test 50
-12
20 10 5 VGS = -10 V -15 V
-1 A
-8 -0.5 A ID = -0.2 A 0 0 -4 -8 -12 -16 -20
-4
2 1 -0.01 -0.02
-0.05 -0.1 -0.2
-0.5
-1
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SJ186
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance RDS (on) ()
24 Pulse Test VGS = -10 V 20 -1 A
1 0.5 Tc = -25C 25C 75C
0.2 0.1 0.05
16 -0.5 A ID = -0.2 A 8
12
0.02 0.01 -0.01 -0.02
VDS = -20 V Pulse Test -0.05 -0.1 -0.2 -0.5 -1
4 -40
0
40
80
120
160
Case Temperature
Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
1000 1000 300 100 30 10 3
Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200 100 50 Pulse Test Ta = 25C di / dt = 50 A / s VGS = 0 -0.05 -0.1 -0.2 -0.5 -1
Ciss
Coss
20 10 -0.01 -0.02
Crss 1 0 -10 -20 -30 -40 -50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
-200 VDS
-4
Switching Time t (ns)
VDD = -100 V -150 V -200 V
VGS (V)
0
0
100 50 tf 20 10 5 tr 2 V = -10 V, V = -30 V GS DD PW = 2 s, duty 1 % 1 -0.01 -0.02 -0.05 -0.1 -0.2 td(off) td(on)
Drain to Source Voltage
-400 VGS VDD = -200 V -150 V -100 V
-8
-600
-12
-800 ID = -0.5 A 0 2 4 6 8
-16
-1000
-20 10
Gate to Source Voltage
-0.5
-1
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SJ186
Reverse Drain Current vs. Source to Drain Voltage
-1.0
Reverse Drain Current IDR (A)
Pulse Test
-0.8
-0.6
-0.4
VGS = -10 V
-0.2
0, 5 V
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage
VSD
(V)
Rev.2.00 Sep 07, 2005 page 5 of 6
2SJ186
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
0.4
1.8 Max 1
1.5 0.1 0.44 Max
(1.5)
2.5 0.1 4.25 Max
1.5 1.5 3.0
Ordering Information
Part Name Quantity Shipping Container 2SJ186CYEL-E 1000 pcs 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
(0.2)
Sales Strategic Planning Div.
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http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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